Author:
Deutsch T. F.,Silversmith D. J.,Mountain R. W.
Abstract
ABSTRACTSi3N4 films have been deposited on Si by using 193 nm ArF excimer laser radiation to initiate the reaction of SiH4 and NH3 at substrate temperatures between 200–600°C. Stoichiometric films having physical and optical properties comparable to those produced using low-pressure chemical vapor deposition (LPCVD) have been produced. The dielectric properties of the films are at present inferior to those of LPCVD material.
Publisher
Springer Science and Business Media LLC
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