Reducing azimuthal domains in epitaxial ferroelectric lanthanum-substituted bismuth titanate films using miscut yttria-stabilized zirconia substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1897044
Reference18 articles.
1. Fatigue-free ferroelectric capacitors with platinum electrodes
2. Ferroelectric Memories
3. Lanthanum-substituted bismuth titanate for use in non-volatile memories
4. Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Films of Uniform a -Axis Orientation on Silicon Substrates
5. Growth of uniformly a-axis-oriented ferroelectric lanthanum-substituted bismuth titanate films on silicon substrates
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2. Effect of crystalline quality on the transport properties of ferromagnetic Weyl semimetal Co3Sn2S2;Journal of Solid State Chemistry;2020-09
3. Tuning the Physical Properties of BNT Ferroelectric Film by Miscut Si Substrate;Ferroelectrics;2015-04-04
4. Formation of epitaxial domains: Unified theory and survey of experimental results;physica status solidi (b);2011-01-20
5. Influence of miscut Y2O3-stabilized ZrO2 substrates on the azimuthal domain structure and ferroelectric properties of epitaxial La-substituted Bi4Ti3O12 films;Journal of Applied Physics;2006-09-15
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