Tuning the Physical Properties of BNT Ferroelectric Film by Miscut Si Substrate
Author:
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.tandfonline.com/doi/pdf/10.1080/00150193.2015.1011040
Reference20 articles.
1. Ferroelectric Memories
2. Structure and Device Characteristics of SrBi2Ta2O9-Based Nonvolatile Random-Access Memories
3. Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories
4. Spatial variations in local switching parameters of ferroelectric random access memory capacitors
5. Direct studies of domain switching dynamics in thin film ferroelectric capacitors
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2. Reduction of leakage currents in ferroelectric thin films by flexoelectricity: a phase field study;Smart Materials and Structures;2017-10-23
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