Strain nonuniformity in GaAs heteroepitaxial films on Si(001) studied by x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2407260
Reference27 articles.
1. Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy
2. Generation of misfit dislocations in GaAs grown on Si
3. Strain relief mechanisms and the nature of dislocations in GaAs/Si heterostructures
4. Effects of InGaAs/GaAs strained‐layer superlattices in optimized molecular‐beam‐epitaxy GaAs on Si with Si buffer layers
5. Effects of Si(100) tilting angle and prelayer conditions on GaAs/Si heterostructures
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