Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2945284
Reference8 articles.
1. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
2. Optical Cognitive Information Processing – A New Field
3. Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge2Sb2Te5and Sb2Te3)
4. Prospects of Doped Sb–Te Phase-Change Materials for High-Speed Recording
5. Low-cost and nanoscale non-volatile memory concept for future silicon chips
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1. Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density;physica status solidi (RRL) – Rapid Research Letters;2024-01-19
2. Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells;physica status solidi (RRL) – Rapid Research Letters;2023-11-30
3. Self-Rectifying Memory Cell Based on SiGeAsSe Ovonic Threshold Switch;IEEE Transactions on Electron Devices;2023-05
4. Polarity‐Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material Composition;physica status solidi (RRL) – Rapid Research Letters;2023-01-15
5. Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure;Science China Materials;2022-04-15
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