Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s40843-022-2028-7.pdf
Reference45 articles.
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3. Lee S, Jeong J, Lee TS, et al. Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing. Appl Phys Lett, 2008, 92: 243507
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