Lasing transitions in GaAs/GaAs1−xPxstrained‐layer superlattices withx=0.1–0.5
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96123
Reference10 articles.
1. Stimulated emission in strained‐layer quantum‐well heterostructures
2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
3. Optically pumped GaSb/Al0.6Ga0.4Sb multiquantum well lasers operating in the λ=1.5–1.6 μm region
4. Quantum size effects in GaAs/GaAsxP1−xstrained‐layer superlattices
5. Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy
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1. Band structures and optical properties of Ga1−xInxAs quantum wires grown by strain-induced lateral ordering;Journal of Applied Physics;1998-12
2. Effects of strain and Coulomb interaction on gain and refractive index in quantum-well lasers;Journal of the Optical Society of America B;1993-05-01
3. Many‐body effects in the gain spectra of strained quantum wells;Applied Physics Letters;1991-12-02
4. Gain characteristics of strained quantum well lasers;Applied Physics Letters;1990-01
5. Erratum: ‘‘Electronic structures of In1−xGaxAs‐InP strained‐layer quantum wells’’ [J. Appl. Phys.65, 3096 (1989)];Journal of Applied Physics;1989-06-15
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