Infrared Raman probing of deep‐lying damaged layers in hydrogen‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98241
Reference9 articles.
1. Infrared spectroscopy of amorphous hydrogenated GaAs, GaP, GaSb: Evidence for GaHGa bridges
2. Raman study of phosphorous‐implanted and pulsed laser‐annealed GaAs
3. On the inclusion of macroscopic theory in Monte Carlo simulation using game theory
4. Angular dispersion of ‘‘backward’’ Raman scattering: Absorbing III‐V semiconductors (GaAs)
5. Optical absorption of EL20 and EL2+ in semi-insulating GaAs: Cr
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1. Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications;Journal of Applied Physics;2004-02
2. The Raman Approach to Materials Science;Application of Particle and Laser Beams in Materials Technology;1995
3. Strain Characterization of Semiconductor Structures and Superlattices;Light Scattering in Semiconductor Structures and Superlattices;1991
4. In Search of Hydrogen Local Vibrational Modes in CuCl, CuBr, CuI, ZnS, and AISb;physica status solidi (b);1989-09-01
5. Optical Effects of High Energy Implantations in Semiconductors;physica status solidi (b);1989-05-01
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