Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1637956
Reference13 articles.
1. Electrical and optical properties of oxygen‐ion hot‐implanted GaAs layers
2. Raman‐scattering studies of silicon‐implanted gallium arsenide: The role of amorphicity
3. Resonant two‐phonon Raman scattering in GaAs: A sensitive probe for implantation damage and annealing
4. Raman-scattering depth profile of the structure of ion-implanted GaAs
5. Effects of As+ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
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