Infrared spectroscopy of amorphous hydrogenated GaAs, GaP, GaSb: Evidence for GaHGa bridges-Reference-Cited by-同舟云学术

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Infrared spectroscopy of amorphous hydrogenated GaAs, GaP, GaSb: Evidence for GaHGa bridges

Published:1983-03 Issue: Volume:117-118 Page:968-970
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Wang Z.P.,Ley L.,Cardona M.

Publisher

Elsevier BV

Subject

General Engineering

Reference5 articles.

1. Negative-UStates in the Gap in Hydrogenated Amorphous Silicon

2. Vibrational properties of hydrogenated amorphous GaAs

3. Preparation of ‘unto-ordinated’ hydridoaluminium tetrahydroborate compounds, Al(BH4)3–xHx(x= 1 or 2), and alane (AlH3) species

4. Stress-Dependence of the Raman Frequencies and Elastic Constants of Cubic Semiconductors

5. Infrared absorption in hydrogenated amorphous and crystallized germanium

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A structural study on a-GaP prepared at different temperatures;Journal of Physics: Condensed Matter;1992-09-21

2. Hydrogen depth profiling in bevelled proton-implanted semiconductors by 4He ERDA and 19F NRA;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

3. Hydrogen-related defects in hydrogenated amorphous semiconductors;Physical Review B;1991-07-15

4. Proton Beam Modification of Selected AIIIBVCompounds;Physica Status Solidi (a);1991-03-16

5. AC photoconductivity of amorphous GaP diodes made by reactive evaporation under implantation of hydrogen ions;Journal of Non-Crystalline Solids;1987-12

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