A structural study on a-GaP prepared at different temperatures-Reference-Cited by-同舟云学术

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A structural study on a-GaP prepared at different temperatures

Published:1992-09-21 Issue:38 Volume:4 Page:7759-7772
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Elgun N,Gurman S J,Davis E A

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Link

http://stacks.iop.org/0953-8984/4/i=38/a=009/pdf

Reference22 articles.

1. EXAFS of amorphous GaAs: evidence for inequivalent environments of Ga and As

2. Investigation of disorder effects in amorphous GaAs and GaP by EXAFS

3. Structural investigation of the a-Ga1−xAsx system

4. EXAFS evidence for chemical disorder in amorphous GaP

5. EXAFS study of the local atomic structure in amorphous InP

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1. Amorphous Group III–V Semiconductors;Springer Series in Optical Sciences;2014-11-06

2. Review on Synthesis and Characterization of Gallium Phosphide;Procedia Materials Science;2014

3. Influence of Process Parameters on the RF Sputtered GaP Thin Films;Journal of Materials Science & Technology;2013-09

4. Structure and electronic properties of hydrogenated amorphous GaP;Journal of Non-Crystalline Solids;2003-11

5. Structural properties of sputtered amorphous Ga1-xPxfilms;Journal of Physics: Condensed Matter;2000-05-17

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