AC photoconductivity of amorphous GaP diodes made by reactive evaporation under implantation of hydrogen ions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Analysis of the modulated photocurrent in amorphous semiconductors
2. Modulated Photocurrent in Hydrogenated Amorphous Silicon
3. Plasma deposition of GaP and GaN
4. Properties of GaAs and GaP Amorphous-Film/Crystal Junctions
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Localized states of a-GaP:N by nitrogen ion beam assisted deposition;Journal of Non-Crystalline Solids;1996-05
2. Amorphous gallium phosphide (a-GaP) pn-diode by ion beam assisted deposition;Solar Energy Materials and Solar Cells;1994-09-11
3. Transport and optical properties of a-GaP prepared at different substrate temperatures;Journal of Physics: Condensed Matter;1994-01-17
4. Doping for making n- and p-type a-GaP:H films during reactive evaporation and sputtering;Journal of Non-Crystalline Solids;1991-01
5. Photoconductivity of hydrogenated amorphous GaP / chrystalline GaP junction;Journal of Non-Crystalline Solids;1989-12
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