Amorphous gallium phosphide (a-GaP) pn-diode by ion beam assisted deposition-Reference-Cited by-同舟云学术

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Amorphous gallium phosphide (a-GaP) pn-diode by ion beam assisted deposition

Published:1994-09-11 Issue: Volume:35 Page:353-358
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Kubota Hiroshi,Matsumoto Tsuyoshi,Hirayu Tsuyoshi,Fujiyoshi Takanori,Miyagawa Ryuji,Miyahara Kuniyuki,Onuki Masami

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Amorphous Group III–V Semiconductors;Springer Series in Optical Sciences;2014-11-06

2. Structural properties of sputtered amorphous Ga1-xPxfilms;Journal of Physics: Condensed Matter;2000-05-17

3. Localized states of a-GaP:N by nitrogen ion beam assisted deposition;Journal of Non-Crystalline Solids;1996-05

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