Doping for making n- and p-type a-GaP:H films during reactive evaporation and sputtering-Reference-Cited by-同舟云学术

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Doping for making n- and p-type a-GaP:H films during reactive evaporation and sputtering

Published:1991-01 Issue: Volume:137-138 Page:935-938
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Fujiyoshi Takanori,Onuki Masami,Honmyo Kenji,Kubota Hiroshi,Matsumoto Tsuyoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. AC photoconductivity of amorphous GaP diodes made by reactive evaporation under implantation of hydrogen ions

2. Time-of-flight measurement of hydrogenated amorphous GaP

3. Photoconductivity of hydrogenated amorphous GaP / chrystalline GaP junction

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma-enhanced atomic layer deposition of Zn-doped GaP;Journal of Physics: Conference Series;2021-03-01

2. Physical properties of amorphous gallium arsenide;Handbook of Thin Films;2002

3. Transport and optical properties of a-GaP prepared at different substrate temperatures;Journal of Physics: Condensed Matter;1994-01-17

4. An Exploratory Survey of p-Layers for a-Si:H Solar Cells;MRS Proceedings;1994

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