Plasma-enhanced atomic layer deposition of Zn-doped GaP

Abstract

Abstract The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES). Strong band bending was confirmed by electrical measurements performed for the p-n homojunctions formed by deposition of p-GaP on the surface of n-type GaP substrates, which indicates the acceptor behavior of the impurity. It has been shown that p-type GaP deposited by PE-ALD can be used to form photovoltaic converters.