Si doped GaP layers grown on Si wafers by low temperature PE-ALD-Reference-Cited by-同舟云学术

Si doped GaP layers grown on Si wafers by low temperature PE-ALD

Published:2018-03 Issue:2 Volume:10 Page:021001
ISSN:1941-7012
Container-title:Journal of Renewable and Sustainable Energy
language:en
Short-container-title:Journal of Renewable and Sustainable Energy

Author:

Gudovskikh A. S.¹²^ORCID,Uvarov A. V.¹,Morozov I. A.¹^ORCID,Baranov A. I.¹,Kudryashov D. A.¹^ORCID,Nikitina E. V.¹,Bukatin A. A.¹,Zelentsov K. S.¹^ORCID,Mukhin I. S.¹,Levtchenko A.³,Le Gall S.³,Kleider J.-P.³

Affiliation:

1. St.Petersburg National Research Academic University RAS, 194021 St. Petersburg, Russia

2. Saint-Petersburg Electrotechnical University “LETI,” 197376 Saint-Petersburg, Russia

3. GeePs, Group of Electrical Engineering - Paris, UMR 8507 CNRS, Centrale Supélec, Univ. Paris-Sud, Université Paris-Saclay Sorbonne Universités, UPMC Univ Paris 06, 91192 Gif-sur-Yvette Cedex, France

Funder

Russian Science Foundation

Publisher

AIP Publishing

Subject

Renewable Energy, Sustainability and the Environment

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5000256

Reference23 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

3. Band Discontinuities in Gallium Phosphide/Crystalline Silicon Heterojunctions Studied by Internal Photoemission

4. GaP/Si anisotype heterojunction solar cells

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