Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells-Reference-Cited by-同舟云学术

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Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells

Published:2016-03-07 Issue:9 Volume:119 Page:094301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tito M. A.¹^ORCID,Pusep Yu. A.¹,Gold A.²,Teodoro M. D.³,Marques G. E.³,LaPierre R. R.⁴

Affiliation:

1. São Carlos Institute of Physics, University of São Paulo, PO Box 369, 13560-970 São Carlos, São Paulo, Brazil

2. Université de Toulouse (UPS), CEMES-CNRS, 118 Route de Narbonne, 31062 Toulouse, France

3. Departamento de Física, Universidade Federal de São Carlos, 13565-905 São Carlos, São Paulo, Brazil

4. Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada

Funder

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada (CANRIMT, NSERC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942854

Reference35 articles.

1. Auger recombination in InGaN measured by photoluminescence

2. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

3. Ab initio study of hot electrons in GaAs

4. Radiative and Auger processes in semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Helical conducting edge states in narrow-gap semiconductors without band inversion;Physical Review B;2022-01-18

2. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well;Journal of Applied Physics;2019-04-21

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