Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well
Author:
Affiliation:
1. São Carlos Institute of Physics, University of São Paulo, PO Box 369, 13560-970 São Carlos, SP, Brazil
2. Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
Funder
Fundação de Amparo à Pesquisa do Estado de São Paulo
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5085493
Reference15 articles.
1. Direct and phonon-assisted indirect Auger and radiative recombination lifetime in HgCdTe, InAsSb, and InGaAs computed using Green's function formalism
2. First-principles calculations of indirect Auger recombination in nitride semiconductors
3. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
4. Modification of the virtual-crystal approximation for ternary III-V compounds
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