Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363558
Reference21 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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3. Hydrogenation ofp‐type gallium nitride
4. Prospects for device implementation of wide band gap semiconductors
5. III-V nitrides for electronic and optoelectronic applications
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