Raoult’s Formalism in Understanding Low-Temperature Growth of GaN Nanowires Using Binary Precursor
Author:
Affiliation:
1. Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, Tamil Nadu, India
2. Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam - 603 102, Tamil Nadu, India
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp405966k
Reference30 articles.
1. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications
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5. Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy
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