One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique-Reference-Cited by-同舟云学术

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One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique

Published:2017-11 Issue: Volume:478 Page:134-139
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Barick B.K.,Yadav Shivesh,Dhar S.

Funder

Department of Science and Technology

Council of Scientific & Industrial Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111);Koester;Nano Lett.,2015

2. Single gallium nitride nanowire lasers;Johnson;Nat. Mater.,2002

3. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors;Li;Nano Lett.,2006

4. Defects in GaN nanowires;Tham;Adv. Funct. Mater.,2006

5. Role of the surface polarity in governing the luminescence properties of ZnO nanoparticles synthesized by sol–gel route;Sharma;Appl. Surf. Sci.,2013

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-assembly and growth mechanism of N-polar knotted GaN nanowires on c-plane sapphire substrate by Au-assisted chemical vapor deposition;Journal of Alloys and Compounds;2020-06

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