A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

Published:2012-01-20 Issue:1 Volume:51 Page:01AF05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shin Min Jeong,Kim Min Ji,Jeon Hun Soo,Ahn Hyung Soo,Yi Sam Nyung,Huh Yoon,Yu Young-Moon,Sawaki Nobuhiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

3. Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction

4. Field-emission characteristics of SiC nanowires prepared by chemical-vapor deposition

5. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy;Journal of Applied Physics;2017-11-28

2. Behavior of GaN nanoneedles grown by using hydride vapor phase epitaxy for different growth times;Journal of the Korean Physical Society;2015-04

3. Influence of Ni and Au/Ni catalysts on GaN nanowire growth;physica status solidi (a);2013-10-04

4. A GaN nanoneedle inorganic/organic heterojunction structure for optoelectronic devices;Materials Letters;2013-01

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