First principles calculations of the formation energy and deep levels associated with the neutral and charged vacancy in germanium
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2907730
Reference26 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information
3. Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium
4. GermaniumGe70/74Ge isotope heterostructures: An approach to self-diffusion studies
5. Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals
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3. A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization;Applied Surface Science;2021-03
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