Low threshold InGaAsP terrace mass transport laser on semi‐insulating substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93420
Reference3 articles.
1. A novel technique for GaInAsP/InP buried heterostructure laser fabrication
2. Mode stabilized terrace InGaAsP lasers on semi‐insulating InP
3. GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mass transport: semiconductor microstructure fabrication by surface energy;Materials Science and Engineering: R: Reports;2003-10
2. Two-dimensional simulation of constricted-mesa InGaAsP/InP buried-heterostructure lasers;IEEE Journal of Quantum Electronics;1994
3. Laser Structures and Their Performance;Semiconductor Lasers;1993
4. Surface‐energy‐induced mass‐transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation;Journal of Applied Physics;1990-03
5. A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor;IEEE Journal of Quantum Electronics;1987-06
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