Surface‐energy‐induced mass‐transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation-Reference-Cited by-同舟云学术

Surface‐energy‐induced mass‐transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experimental confirmation

Published:1990-03 Issue:5 Volume:67 Page:2434-2440
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liau Z. L.,Zeiger H. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.345513

Reference22 articles.

1. A novel technique for GaInAsP/InP buried heterostructure laser fabrication

2. Vapor-phase transport of GaAs on a V-shape grooved GaAs substrate

3. Low threshold InGaAsP terrace mass transport laser on semi‐insulating substrate

4. Deformation-free overgrowth of InGaAsP DFB corrugations

5. Preserving InP surface corrugations for 1.3 μm GaInAsP/InP DFB lasers from thermal deformation during LPE process

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