Mushroom structure of GaN template for epitaxial growth of GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference33 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer;Amano;Applied Physics Letters,1986
2. GaN growth using GaN buffer layer;Nakamura;Japanese Journal of Applied Physics,1991
3. Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapor phase epitaxy;Frayssinet;MRS Internet Journal of Nitride Semiconductor Research,2002
4. Influence of SiN buffer layer in GaN epilayers;Park;Journal of Crystal Growth,2003
5. Improved brightness of 380nm GaN light emitting diodes through intentional delay of the nucleation island coalescence;Koleske;Applied Physics Letters,2002
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