GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structure
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19820246?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InGaAsP/InP high‐power semi‐insulating blocked planar buried‐heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy;Applied Physics Letters;1987-12-28
2. InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD;IEEE Journal of Quantum Electronics;1987-06
3. Very low threshold InGaAsP mesa laser;IEEE Journal of Quantum Electronics;1983-05
4. Low threshold InGaAsP terrace mass transport laser on semi‐insulating substrate;Applied Physics Letters;1982-12-15
5. Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices;IEEE Journal of Quantum Electronics;1982-10
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