Temperature-dependent morphology of three-dimensional InAs islands grown on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124665
Reference18 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Independent manipulation of density and size of stress-driven self-assembled quantum dots
3. Shape transition of InAs quantum dots by growth at high temperature
4. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
5. Formation of carbon-induced germanium dots
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1. Optical properties of InAs/GaAs quantum dot superlattice structures;Results in Physics;2018-06
2. Indium Arsenide Islands on Silicon;Dekker Encyclopedia of Nanoscience and Nanotechnology, Third Edition;2014-06-10
3. Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate;physica status solidi (a);2009-11-18
4. Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings;Advanced Materials;2007-07-16
5. Formation of In-(2×1) and In islands on Si(100)-(2×1) by femtosecond pulsed laser deposition;Journal of Applied Physics;2007-06
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