Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings-Reference-Cited by-同舟云学术

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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Published:2007-07-16 Issue:14 Volume:19 Page:1801-1806
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Mårtensson T.,Wagner J. B.,Hilner E.,Mikkelsen A.,Thelander C.,Stangl J.,Ohlsson B. J.,Gustafsson A.,Lundgren E.,Samuelson L.,Seifert W.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference40 articles.

1. R. Chau, S. Datta, A. Majumdar, presented at the Compound Semiconductor Integrated Circuit Symp., Palm Springs, CA, October–November 2005.

2. Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

3. Spatially controlled, nanoparticle-free growth of InP nanowires

4. The Controlled Growth of GaN Nanowires

5. Engineering atomic and molecular nanostructures at surfaces

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