Laser annealing of self‐ion damaged silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91260
Reference8 articles.
1. Amorphous thickness dependence in the transition to single crystal induced by laser pulse
2. Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation
3. Grain size dependence in a self‐implanted silicon layer on laser irradiation energy density
4. Time‐resolved reflectivity of ion‐implanted silicon during laser annealing
5. Segregation Effects in Cu-Implanted Si after Laser-Pulse Melting
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021
2. Transient annealing of semiconductors by laser, electron beam and radiant heating techniques;Reports on Progress in Physics;1985-08-01
3. Electron microscopy studies of pulsed electron beam annealing in phosphorus‐implanted silicon;Journal of Applied Physics;1983-03
4. Epitaxy by Pulsed Annealing of Ion-Implanted Silicon;Laser Annealing of Semiconductors;1982
5. Microstructure and Topography;Laser Annealing of Semiconductors;1982
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3