Epitaxy by Pulsed Annealing of Ion-Implanted Silicon
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Publisher
Elsevier
Reference69 articles.
1. Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing
2. A melting model for pulsing‐laser annealing of implanted semiconductors
3. Phase Transitions in Amorphous Si Produced by Rapid Heating
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Signatures of self-interstitials in laser-melted and regrown silicon;AIP Advances;2021-05-01
2. Direct-energy processes and phase transitions in silicon;Il Nuovo Cimento D;1993-02
3. Ion Implantation;Microelectronic Materials and Processes;1989
4. Laser Induced Chemical Reactions at the Al III-V Semiconductor Interface;Proceedings of the 17th International Conference on the Physics of Semiconductors;1985
5. Epitaxy and Defects in Laser-Irradiated, Single-Crystal Bismuth;MRS Proceedings;1984
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