Laser Induced Chemical Reactions at the Al III-V Semiconductor Interface-Reference-Cited by-同舟云学术

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Laser Induced Chemical Reactions at the Al III-V Semiconductor Interface

Published:1985 Issue: Volume: Page:137-140
ISSN:
Container-title:Proceedings of the 17th International Conference on the Physics of Semiconductors
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Author:

Richter H. W.,Brillson L. J.

Publisher

Springer New York

Link

http://link.springer.com/content/pdf/10.1007/978-1-4615-7682-2_30

Reference16 articles.

1. L. J. Brillson, Surf. Sci. Repts. 2, 123 (1982);

2. L. J. Brillson, J. Phys. Chem. Solids 44, 703 (1983).

3. G. Margaritondo, Solid State Electron. 26, 499 (1983).

4. R. H. Williams, Contemp. Phys. 23, 329 (1982).

5. G. Foti, E. Rimini, in “Laser-Annealing of Semiconductors”, ed. J. M. Poate and J. W. Mayer (Academic Press, New York, 1982) p.203.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adsorption and Schottky Barrier Formation on Compound Semiconductor Surfaces;Surface Properties of Electronic Materials - The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis;1988

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