Characterizing an implanted Si/Si p–n junction with lower doping level by combined electron holography and focused-ion-beam milling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1491606
Reference5 articles.
1. Direct observation of potential distribution across Si/Sip‐njunctions using off‐axis electron holography
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4. Observation of magnetic‐domain states of barium ferrite particles by electron holography
5. Examination of electrostatic potential distribution across an implanted p-n junction by electron holography
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4. Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography;Ultramicroscopy;2015-05
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