Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography-Reference-Cited by-同舟云学术

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Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

Published:2015-05 Issue: Volume:152 Page:10-20
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Yazdi Sadegh,Kasama Takeshi,Beleggia Marco,Samaie Yekta Maryam,McComb David W.,Twitchett-Harrison Alison C.,Dunin-Borkowski Rafal E.

Funder

EPSRC

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Enhancing semiconductor device performance using ordered dopant arrays

2. International Technology Roadmap for Semiconductors, 〈http://www.itrs.net/links/2010ITRS/home2010.htm〉 (2010).

3. Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

4. Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures

5. Electron holography—basics and applications

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