Room-temperature 2-μm GeSn P-I-N homojunction light-emitting diode for inplane coupling to group-IV waveguides-Reference-Cited by-同舟云学术

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Room-temperature 2-μm GeSn P-I-N homojunction light-emitting diode for inplane coupling to group-IV waveguides

Published:2017-10-02 Issue:14 Volume:111 Page:141105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chang Chiao¹^ORCID,Chang Tai-Wei¹,Li Hui¹,Cheng Hung Hsiang¹,Soref Richard²,Sun Greg²,Hendrickson Joshua R.³

Affiliation:

1. Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan

2. Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

3. Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA

Funder

Ministry of Science and Technology, Taiwan (MOST)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4999395

Reference22 articles.

1. Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si

2. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

3. Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

4. Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

5. Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate

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