Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature
Author:
Affiliation:
1. Institute of Microelectronics, Peking University, Beijing 100871, China
2. Shenzhen Graduate School, Peking University, Shenzhen 518055, China
Funder
National Basic Research Program of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011226
Reference28 articles.
1. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing
2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
3. Photosensitivity of InZnO thin-film transistors using a solution process
4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
5. Positive Gate Bias and Temperature-Induced Instability of -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric
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