Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate
Author:
Affiliation:
1. Fuji Electric Co., Ltd., 4-18-1, Tsukama, Matsumoto, Nagano 390-0821, Japan
2. University of Yamanashi, 4-3-11, Takeda, Kofu, Yamanashi 400-8511, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011229
Reference14 articles.
1. D. H. Lu , H. Takubo , H. Wakimoto , T. Muramatsu , and H. Nakazawa , in Proc. ECCE US (2016), p. EC-0159.
2. B. J. Baliga , Power Semiconductor Devices ( PWS Publishing Company, 1996), pp. 169–171.
3. S. M. Sze , Physics of Semiconductor Devices, 2nd ed. ( Wiley Interscience Publication, 1981), pp. 84–92.
4. Fast capacitance transient appartus: Application to ZnO and O centers in GaP p‐n junctions
5. Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy
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