Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation
Author:
Affiliation:
1. Tokyo University of Agriculture and Technology, 2-24-16, Naka-cho, Koganei, Tokyo 184-8588, Japan
2. Osaka Prefecture University, 1-2, Gakuen-cho, Naka-ku, Sakai, Osaka 599-8570, Japan
Funder
Tokyo University of Agriculture and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011224
Reference24 articles.
1. Quantitative analysis of complexes in electron irradiated CZ silicon
2. Vibrational absorption bands for implanted nitrogen in crystalline silicon
3. Structure and Electronic Properties of Nitrogen Defects in Silicon
4. Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
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