Kinetics of Bulk Lifetime Degradation in Float‐Zone Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen versus Light-Reference-Cited by-同舟云学术

Kinetics of Bulk Lifetime Degradation in Float‐Zone Silicon: Fast Activation and Annihilation of Grown‐In Defects and the Role of Hydrogen versus Light

Published:2020-08-06 Issue:17 Volume:217 Page:2000436
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hiller Daniel¹^ORCID,Markevich Vladimir P.²,de Guzman Joyce Ann T.²,König Dirk³⁴,Prucnal Slawomir⁵,Bock Wolfgang⁶,Julin Jaakko⁵⁷,Peaker Anthony R.²,Macdonald Daniel¹,Grant Nicholas E.⁸,Murphy John D.⁸

Affiliation:

1. Research School of Engineering Australian National University (ANU) Canberra ACT 2601 Australia

2. Photon Science Institute and School of Electrical and Electronic Engineering University of Manchester Manchester M13 9PL UK

3. Integrated Materials Design Centre (IMDC) University of New South Wales (UNSW) Sydney NSW 2052 Australia

4. Integrated Materials Design Lab (IMDL) Australian National University (ANU) Canberra ACT 2601 Australia

5. Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf (HZDR) 01328 Dresden Germany

6. Institute for Surface and Thin Film Analysis (IFOS) 67663 Kaiserslautern Germany

7. Department of Physics University of Jyväskylä FI-40014 Jyväskylä Finland

8. School of Engineering University of Warwick Coventry CV4 7AL UK

Funder

Alexander von Humboldt-Stiftung

Australian Centre for Advanced Photovoltaics

Engineering and Physical Sciences Research Council

University of New South Wales

RWTH Aachen University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000436

Reference53 articles.

1. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

2. W. P.Mulligan D. H.Rose M. J.Cudzinovic D. M.De Ceuster K. R.McIntosh D. D.Smith R. M.Swanson Proc. 19th EU PVSEC Paris2004 p.387.

3. J.Vedde T.Clausen L.Jensen Proc. 3rd IEEE-WCPEC Osaka2003 p.943.

4. J.Vedde L.Jensen T.Larsen T.Clausen Proc. 19th EU PVSEC Paris2004 p.1075.

5. Passivation of Detector‐Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxide

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