Residual acceptor impurities in undoped high‐purity InP grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102702
Reference16 articles.
1. A study of residual background doping in high purity indium phosphide grown by atmospheric pressure OMVPE
2. Very high purity InP epilayer grown by metalorganic chemical vapor deposition
3. Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour deposition
4. Growth of ultrapure and Si‐doped InP by low pressure metalorganic chemical vapor deposition
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1. A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition;Journal of Applied Physics;1998-07
2. Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles;Journal of Crystal Growth;1998-03
3. Optical properties of InP epilayers grown on (1 1 1)B GaP substrates by metalorganic chemical vapor deposition;Solid State Communications;1997-02
4. Growth and characterisation of InP by close vapour transport;Materials Science and Technology;1996-02
5. Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels;Physical Review Letters;1995-08-21
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