Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels-Reference-Cited by-同舟云学术

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Radioactive Isotopes in Photoluminescence Experiments: Identification of Defect Levels

Published:1995-08-21 Issue:8 Volume:75 Page:1594-1597
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Magerle R.,Burchard A.,Deicher M.,Kerle T.,Pfeiffer W.,Recknagel E.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.75.1594/fulltext

Reference13 articles.

1. Residual acceptor impurities in undoped high‐purity InP grown by metalorganic chemical vapor deposition

2. Self-Compensation Limited Conductivity in Binary Semiconductors. I. Theory

3. Doping in ZnSe, ZnTe, MgSe, and MgTe wide-band-gap semiconductors

4. Donors and acceptors in tellurium compounds; The problem of doping and self-compensation

5. Isoelectronic Trap Li-Li-O in GaP

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4. Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques;Physical Review B;2006-04-20

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