Electronic degeneracy conduction in highly Si-doped Al0.6Ga0.4N layers based on the carrier compensation effect
Author:
Affiliation:
1. Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
2. Toyoda Gosei Co., Ltd., Heiwa, Aichi 490-1312, Japan
3. TS Opto Co., Ltd., Ichihara, Chiba 290-0067, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0030825
Reference33 articles.
1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
3. A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
4. A 271.8 nm deep-ultraviolet laser diode for room temperature operation
5. Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
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