Doping reaction of PH3and B2H6with Si(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336708
Reference12 articles.
1. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
2. P‐Doped Polysilicon Film Growth Technology
3. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon System
4. Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
5. The adsorption of PH3 on Si(100) and its effect on the coadsorption of SiH4
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