Microcrystalline Si films grown at low temperatures (90–220 °C) with high rates in atmospheric-pressure VHF plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159887
Reference25 articles.
1. Structural properties and electronic transport in intrinsic microcrystalline silicon deposited by the VHF-GD technique
2. Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge
3. Kinetic‐energy distributions of ions sampled from argon plasmas in a parallel‐plate, radio‐frequency reference cell
4. High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition
5. High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma
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2. Gas-phase kinetics in atmospheric-pressure plasma-enhanced chemical vapor deposition of silicon films;Journal of Applied Physics;2021-08-07
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