Graphene-oxide-semiconductor planar-type electron emission device-Reference-Cited by-同舟云学术

Graphene-oxide-semiconductor planar-type electron emission device

Published:2016-02-22 Issue:8 Volume:108 Page:083506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Murakami Katsuhisa¹²,Tanaka Shunsuke¹²,Miyashita Akira¹²,Nagao Masayoshi³,Nemoto Yoshihiro⁴,Takeguchi Masaki⁴,Fujita Jun-ichi¹²

Affiliation:

1. Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

2. Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

3. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

4. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

University of Tsukuba

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4942885

Reference28 articles.

1. Fabrication of gated nano electron source for vacuum nanoelectronics

2. Emission characteristics of metal–oxide–semiconductor electron tunneling cathode

3. Highly efficient and long life metal–insulator–metal cathodes

4. Development of a super-high-sensitivity image sensor using 640×480 pixel active-matrix high-efficiency electron emission device

5. Quantitative relationship between the work function and transfer ratio of a potassium-adsorbed MIM cathode

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