Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels-Reference-Cited by-同舟云学术

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Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels

Published:2023-07-10 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)
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Author:

Herdl Florian¹,Kueddelsmann Maximillian J.²,Schels Andreas¹,Bachmann Michael³,Edler Simon³,Wohlfartsstätter Dominik³,Düsberg Felix³,Prugger Alexander³,Dillig Michael³,Dams Florian³,Schreiner Rupert⁴,Coileáin Cormac Ó¹,Zimmermann Stefan²,Pahlke Andreas³,Duesberg Georg S.¹

Affiliation:

1. University of the Bundeswehr Munich, Institute of Physics,Center for Integrated Sensor Systems,Germany

2. Leibniz University Hannover, Institute of Electrical Engineering and Measurement Technology,Germany

3. KETEK GmbH,Munich,Germany

4. Ostbayerische Technische Hochschule Regensburg,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10188930/10188876/10188974.pdf?arnumber=10188974

Reference7 articles.

1. Use of Millikan–Lauritsen plots, rather than Fowler–Nordheim plots, to analyze field emission current-voltage data

2. Graphene-oxide-semiconductor planar-type electron emission device

3. Emission characteristics of metal–oxide–semiconductor electron tunneling cathode

4. Synthesis and analysis of thin conducting pyrolytic carbon films

5. Mechanism of Highly Efficient Electron Emission from a Graphene/Oxide/Semiconductor Structure

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