Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371834
Reference27 articles.
1. Surface study of thin epitaxial CoSi2/Si(100) layers by scanning tunneling microscopy and reflection high-energy electron diffraction
2. Interface structure of MBE-grownCoSi2/Si/CoSi2layers on Si(111): Partially correlated roughness and diffuse x-ray scattering
3. X-ray characterization of buried allotaxially grown CoSi2 layers in Si(100)
4. Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
5. X-ray reflectivity and diffuse-scattering study ofCoSi2layers in Si produced by ion-beam synthesis
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1. Controlled growth of extended arrays of CoSi2 hexagonal nanoplatelets buried in Si(001), Si(011) and Si(111) wafers;Phys. Chem. Chem. Phys.;2015
2. Contrast variation by anomalous X-ray scattering applied to investigation of the interface morphology in a giant magnetoresistance Fe/Cr/Fe trilayer;Journal of Applied Crystallography;2007-05-15
3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
4. Polycrystalline silicon/CoSi2 Schottky diode with integrated SiO2 antifuse: a nonvolatile memory cell;Applied Physics Letters;2003-06-09
5. Morphology and interdiffusion behavior of evaporated metal films on crystalline diindenoperylene thin films;Journal of Applied Physics;2003-05
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