Theoretical investigation of surface roughness scattering in silicon nanowire transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2001158
Reference12 articles.
1. High Performance Silicon Nanowire Field Effect Transistors
2. Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
3. Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
4. Transport in quantum wells in the presence of interface roughness
5. A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
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