Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stability
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
2. Department of Physics, Indian Institute of Technology Jodhpur, Jodhpur 342037, India
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0050448
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