Barium oxide write-once read-many-times memory with a high resistance window-Reference-Cited by-同舟云学术

Barium oxide write-once read-many-times memory with a high resistance window

Published:2024 Issue:8 Volume:12 Page:2926-2932
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hsu Chih-Chieh¹^ORCID,Cai Zong-Lin¹,Long Pei-Xuan¹,Hsu Min-Yi¹,Huang Bo-Ruei¹,Jhang Wun-Ciang²,Nanda Umakanta³^ORCID

Affiliation:

1. Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan

2. Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan

3. School of Electronics Engineering, VIT-AP University, Amaravati, Near Vijayawada, Andhra Pradesh, 522237, India

Abstract

This study demonstrates write-once-read-many times memory characteristics of BaOx and uses an interfacial AlOx layer to improve the stability of the Al/BaOx/n+-Si memory.

Funder

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04346K

Reference41 articles.

1. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

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4. Self-rectifying and interface-controlled resistive switching characteristics of molybdenum oxide

5. Write-Once-Read-Many-Times and Bipolar Resistive Switching Characteristics of TiN/HfO₂/Pt Devices Dependent on the Electroforming Polarity

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